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AFP02N8-213 Schematic ( PDF Datasheet ) - Alpha Industries

Teilenummer AFP02N8-213
Beschreibung General Purpose Packaged PHEMT Chips
Hersteller Alpha Industries
Logo Alpha Industries Logo 




Gesamt 4 Seiten
AFP02N8-213 Datasheet, Funktion
General Purpose Packaged PHEMT Chips
AFP02N8-212, AFP02N8-213
Features
s Low Noise Figure, 1.55 dB @ 4 GHz
s High Associated Gain, 13 dB @ 4 GHz
s High MAG, > 15 dB @ 4 GHz
s 0.7 µm Ti/Pd/Au Gates
s Passivated Surface
s Low Cost Metal Ceramic Package
s Available with Two Lead Lengths
s Available in Tape and Reel Packaging
Description
The AFP02N8-212, 213 are general purpose packaged
PHEMT chips that have excellent gain and noise
performance through X band, making them suitable for a
wide range of commercial applications. The devices
employ 0.7 µm Ti/Pd/Au gates and surface passivation to
ensure a rugged, reliable part. Available in metal ceramic
packages with a choice of two lead lengths. The
components are also available in tape and reel and are
ready for automatic insertion equipment.
Drain
213
Source
Drain
Source
Gate
Source
Source
Gate
212
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (VDS)
Gate to Source Voltage (VGS)
Drain Current (IDS)
Gate Current (IGS)
Total Power Dissipation (PT)
Storage Temperature (TST)
Channel Temperature (TCH)
Value
6V
-3 V
IDSS
10 µA
300 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (IDSS)
Transconductance (gm)
Pinch-off Voltage (VP)
Gate to Source
Breakdown Voltage (Vbgs)
Noise Figure (NF)
Associated Gain (GA)
Test Conditions
VDS = 2 V, VGS = 0 V
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 0.3 mA
IGS = -200 µA
VDS = 2 V, IDS = 15 mA, F = 4 GHz
Min.
25.0
30.0
-0.4
-6.0
12.0
Typ. Max. Unit
55.0 90.0 mA
45.0 mS
-1.2 -2.0
V
8.0 V
1.55 2.0
13.2
dB
dB
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com
Specifications subject to change without notice. 6/99A
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