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Número de pieza | BFY180 | |
Descripción | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFY180 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! HiRel NPN Silicon RF Transistor
BFY 180
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ For low power amplifiers at collector currents from
0.2 to 2.5 mA
¥ Hermetically sealed microwave package
¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFY 180 (ql)
Marking Ordering Code
- see below
Pin Configuration
C EBE
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q97111419
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol Limit Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS £ 176 °C 2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
8
15
15
2
4
0.5 1)
30
200
- 65 É + 200
- 65 É + 200
V
V
V
V
mA
mA
mW
°C
°C
°C
Junction soldering point 2)
Rth JS
< 805
K/W
1) The maximum permissible base current for VFBE measurements is 3 mA (spot-measurement duration < 1 s).
2) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Draft A04 1998-04-01
1 page BFY 180
1.02 ±0.1
2
XY
3
4
1.78
1
1.05 ±0.25
0.76
0.1
+0.05
-0.03
GXM05552
Figure 1 Micro-X1 Package
Semiconductor Group 5 Draft A04 1998-04-01
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BFY180.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFY180 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) | Siemens Semiconductor Group |
BFY180 | HiRel NPN Silicon RF Transistor | Infineon Technologies AG |
BFY180ES | HiRel NPN Silicon RF Transistor | Infineon Technologies AG |
BFY180H | HiRel NPN Silicon RF Transistor | Infineon Technologies AG |
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