R3636EC16L Datasheet PDF - IXYS
| Part Number | R3636EC16L | |
| Description | Distributed Gate Thyristor | |
| Manufacturers | IXYS | |
| Logo |  |
|
|
There is a preview and R3636EC16L download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
Preview 1 page No Preview Available !
WESTCODE
An IXYS Company
Date:- 30 Mar, 2007
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R3636EC16# to R3636EC20#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS (Note 1)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
1600-2000
1600-2000
1600-2000
1700-2100
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C (note 2)
Maximum average on-state current. Tsink=85°C (note 2)
Maximum average on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
3636
2501
1518
7168
6233
38.9
42.7
7.57×106
9.12×106
500
1000
5
4
50
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 1 of 12
March, 2007
|
| |
 
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TK (new) = TK (original ) − E ⋅ Rth ⋅ f
Where TK (new) is the required maximum heat sink temperature and
TK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2
=
4⋅
Vr
CS ⋅ di dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 5 of 12
March, 2007
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for R3636EC16L electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ R3636EC16L.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| R3636EC16K | The function is Distributed Gate Thyristor. IXYS | |
| R3636EC16L | The function is Distributed Gate Thyristor. IXYS | |
| R3636EC16M | The function is Distributed Gate Thyristor. IXYS | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
R363
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||