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Número de pieza | CLA5E1200UC | |
Descripción | High Efficiency Thyristor | |
Fabricantes | IXYS | |
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No Preview Available ! High Efficiency Thyristor
Single Thyristor
Part number
CLA5E1200UC
Marking on Product: C5TLUE
21
3
CLA5E1200UC
VRRM = 1200 V
I TAV
=
5A
VT = 1.31 V
Backside: anode
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c
1 page CLA5E1200UC
Thyristor
20
TVJ = 150°C
15 TVJ = 125°C
IT
10
[A]
5
100 100
50 Hz, 80% VRRM
VR = 0 V
ITSM
50
[A]
TVJ = 45°C
TVJ = 125°C
I2t
10
[A2s]
TVJ = 45°C
TVJ = 125°C
TVJ = 25°C
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0
VT [V]
Fig. 1 Forward characteristics
0
0,01
0,1
1
t [s]
Fig. 2 Surge overload current
ITSM: crest value, t: duration
1
1 2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 s)
10
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V] 1
23
1000
100
tgd
5 6 [µs]
4 10
TVJ = 125°C
25
20
IT(AV)M
15
[A]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
4: PGAV = 0.25 W
5: PGM = 2.5 W
6: PGM = 5 W
0,1
1
10 100 1000 10000
IG [mA]
Fig. 4 Gate voltage & gate current
lim.
typ.
1
10 100 1000
IG [mA]
Fig. 5 Gate controlled delay time tgd
5
0
0 40 80 120 160
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
10 1,6
8
P(AV)
6
[W]
4
dc =
1
0.5
0.4
0.33
0.17
0.08
2
RthHA
1.0
2.0
4.0
8.0
12.0
16.0
0
02460
IT(AV) [A]
50 100
Tamb [°C]
150
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
1,2
ZthJC
0,8
[K/W]
0,4
i Rthi (K/W)
1 0.120
2 0.110
3 0.500
4 0.180
5 0.590
ti (s)
0.0100
0.0001
0.0025
0.0550
0.0250
0,0
1
10
100
1000
10000
t [ms]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CLA5E1200UC.PDF ] |
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