|
|
Teilenummer | 3N201 |
|
Beschreibung | DUAL GATE MOSFET VHF AMPLIFIER | |
Hersteller | Digitron Semiconductors | |
Logo | ||
Gesamt 7 Seiten 3N201-3N203
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Drain-source voltage
Drain-gate voltage
Drain current
Gate current
Total device dissipation @ TA = 25°C
Derate above 25°C
Total device dissipation @ TC = 25°C
Derate above 25°C
Lead temperature
Junction temperature range
Storage temperature range
Symbol
VDS
VDG1
VDG2
ID
IG1
IG2
PD
PD
TL
TJ
Tstg
Value
25
30
50
±10
360
2.4
1.2
8.0
300
-65 to 175
-65 to 175
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Drain-source breakdown voltage
(ID = 10µAdc, VS = 0, VG1S = VG2S = -5.0Vdc)
Gate 1-source breakdown voltage (1)
(IG1 = ±10mAdc, VG2S = VDS = 0)
Gate 2-source breakdown voltage (1)
(IG2 = ±10mAdc, VG1S = VDS = 0)
Gate 1 leakage current
(VG1S = ±5.0Vdc, VG2S = VDS = 0)
(VG1S = -5.0Vdc, VG2S = VDS = 0, TA = 150°C)
Gate 2 leakage current
(VG2S = ±5.0Vdc, VG1S = VDS = 0)
(VG2S = -5.0Vdc, VG1S = VDS = 0, TA = 150°C)
Gate 1 to source cutoff voltage
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 20µAdc)
Gate 2 to source cutoff voltage
(VDS = 15Vdc, VG1S = 0, ID = 20µAdc)
ON CHARACTERISTICS
Zero-gate voltage drain current (2)
(VDS = 15Vdc, VG1S = 0, VG2S = 4.0Vdc)
Symbol
Min
Typ
Max
V(BR)DSX
V(BR)G1SO
V(BR)G2SO
IG1SS
IG2SS
VG1S(off)
VG2S(off)
25 -
±6.0 ±12
±6.0 ±12
- ±0.040
--
- ±0.050
--
-0.5 -1.5
-0.2 -1.4
-
±30
±30
±10
-10
±10
-10
-5.0
-5.0
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
µAdc
Vdc
Vdc
3N201, 3N202
3N203
IDSS 6.0 13
3.0 11
30
15
mAdc
Rev. 20120705
High-reliability discrete products
and engineering services since 1977
3N201-3N203
DUAL GATE MOSFET VHF AMPLIFIER
Rev. 20120705
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ 3N201 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
3N200 | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR | Intersil Corporation |
3N200 | Trans MOSFET N-CH 25V 4-Pin TO-72 | New Jersey Semiconductor |
3N201 | Diode ( Rectifier ) | American Microsemiconductor |
3N201 | DUAL GATE MOSFET VHF AMPLIFIER | Motorola Inc |
3N201 | Trans MOSFET N-CH 25V 4-Pin TO-72 | New Jersey Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |