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C180T Schematic ( PDF Datasheet ) - Digitron Semiconductors

Teilenummer C180T
Beschreibung SILICON CONTROLLED RECTFIERS
Hersteller Digitron Semiconductors
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Gesamt 4 Seiten
C180T Datasheet, Funktion
C180A-C180PC SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristics
RMS on-state current
Average on-state current
Peak one-cycle surge (non-repetitive) on-state current (60Hz)
Peak one-cycle surge (non-repetitive) on-state current (50Hz)
Critical rate of rise of on-state current (non-repetitive)
Critical rate of rise of on-state current (repetitive)
I2t (for fusing), 8.3 ms
Peak gate power dissipation
Average gate power dissipation
Storage temperature
Operating temperature
Mounting torque
Mounting torque
Symbol
IT(RMS)
IT(AV)
ITSM
ITSM
di/dt
di/dt
I2t
PGM
PG(AV)
Tstg
TJ
C180
235
150
3500
3200
800
150
50,800
10
2
-40 to +150
-40 to +125
250 to 300
28 to 34
Units
A
A
A
A
A/µs
A/µs
A2s
W
W
°C
°C
In.-lb.
N-m
VOLTAGE RATINGS
Characteristics
Working peak reverse
voltage
C180A
100
C180B
200
C180C
300
C180D
400
C180E
500
C180N
600
C180S
700
C180M
800
C180T
900
C180P
1000
C180PA
1100
C180PB
1200
C180
130
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristics
Symbol
Voltage – Blocking State Maximums
Forward leakage, peak
IDRM
Reverse leakage, peak
IRRM
Current – Conducting State Maximums
Peak on-state voltage
VTM
Switching
Typical turn-off time
tq
Typical delay time
td
Minimum critical dv/dt exponential to VDRM
Thermal
Maximum thermal resistance, junction to case
Case to sink, lubricated
Gate – Maximum Parameters
Gate current to trigger
Gate voltage to trigger
Non-triggering gate voltage
dv/dt
RθJC
RθCS
IGT
VGT
VGDM
Test Conditiions
TJ = 125°C, VDRM = Rated
TJ = 125°C, VRRM = Rated
TJ = 25°C, ITM = 1500A
IT = 150A, TJ = 125°C, diR/dt = 12.5A/µsec, reapplied dv/dt =
20V/µsec, linear to 0.8VDRM, VR = 50V
IT = 100A, VDRM = Rated, gate supply = 10V open ckt, 25Ω, 0.1 µsec
rise time
TJ = 125°C, gate open
TC = 25°C, VD = 6Vdc, RL = 3Ω
TC = -40 to +125°C, VD = 6Vdc, RL = 3Ω
TJ = 125°C, Rated VDRM, RL = 1000Ω
C180
20
20
2.85
100
1.0
200
.14
0.075
150
3.0
0.15
Unit
mA
mA
V
µsec
µsec
V/µse
°C/W
°C/W
mA
V
V
Rev. 20130123





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