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Número de pieza | S2800F | |
Descripción | SILICON CONTROLLED RECTIFIERS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de S2800F (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! S2800 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage (1)
Symbol
Value
Unit
(TJ = 25 to 100°C, gate open)
S2800F
50
S2800A
S2800B
VRRM, VDRM
100
200
Volts
S2800D
400
S2800M
600
S2800N
Peak non-repetitive reverse voltage and non-repetitive off state voltage(1)
800
(TJ = 25 to 100°C, gate open)
S2800F
75
S2800A
S2800B
VRSM, VDSM
125
250
Volts
S2800D
500
S2800M
700
S2800N
900
Forward on-state current RMS (all conduction angles) TC = 75°C
Peak forward surge current
(one cycle, sine wave, 60Hz, TC = 80°C)
Circuit fusing considerations
(t = 8.3ms)
IT(RMS)
ITSM
I2t
10 Amps
100 Amps
40 A2s
Forward peak gate power (t ≤ 10µs)
PGM
16 Watts
Forward average gate power
PG(AV)
0.5 Watts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices
are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RѲJC
Maximum value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(VAK = VDRM or VRRM, gate open)
TC = 25°C
TC = 100°C
Instantaneous on-state voltage
(ITM = 30A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
Gate trigger current (continuous dc)
(VD = 12V, RL = 30Ω)
Gate trigger current (continuous dc)
(VD = 12V, RL = 30Ω)
Symbol Min Typ Max Unit
IDRM - - 10 µA
- - 2 mA
VT - 1.7 2 Volts
IGT - 8 15 mA
VGT - 0.9 1.5 volts
Rev. 20130128
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet S2800F.PDF ] |
Número de pieza | Descripción | Fabricantes |
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