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Número de pieza | 2N3011 | |
Descripción | SWITCHING TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltaged)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Peak (10 /us Pulse)
Total Device Dissipation (»T/\ = 25°C
Derate above 25°C
Total Device Dissipation (d Jq = 25°C
TC = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCES
vCBO
v EBO
•c
PD
Pd
Tj, T st g
Value
12
30
30
5.0
200
500
0.36
2.06
1.20
0.68
6.85
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS <TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) 0c = 10 mAdc, lg = 0)
Collector-Emitter Breakdown Voltage Oc = 10 /xAdc, Vbe = 0)
Collector-Base Breakdown Voltage Oc = 10 /uAdc, Ie = 0)
Emitter-Base Breakdown Voltage Og = 100 /uAdc, lc = 0)
Collector Cutoff Current (Vce = 20 Vdc Vbe = °>
(Vce = 20 Vdc, V BE = 0, TA = +85°C)
Base Cutoff Current
(Vce
=
20
vdc
-
V BE
=
°)
ON CHARACTERISTICS (2)
DC Current Gain
Oc
=
10 mAdc, Vce
=
°- 35
vdc
'
OC
=
30
mAdc, Vce
=
°
4
Vdc
>
C = 100 mAdc, V C e = 1-0 Vdc)
Collector-Emitter Saturation Voltage
Oc = 10 mAdc, Iq = 1.0 mAdc)
Oc = 30 mAdc, lg = 3.0 mAdc)
OC = 100 mAdc, Bl = 10 mAdc)
dC = 10 mAdc, Ib = 1.0 mAdc, TA =
+85°C)
Base-Emitter Saturation Voltage
Oc = 10 mAdc, Ib = 10 mAdc)
OC = 30 mAdc, Ib = 3.0 mAdc)
OC = 100 mAdc, Ib = 10 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product Oc == 20 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance (Vcb = 5.0 Vdc, l£ = 0, f = 140 kHz)
SWITCHING CHARACTERISTICS
Storage Time
Oc = 'Bl = _I B2 = 10 rnAdc)
Turn-On Time
(Vce = 20 Vdc, VgB(off) = 0, lc = 30 mAdc, lei = 3.0 mAdc)
Turn-Off Time
(Vce = 2.0 Vdc, lc = 30 mAdc, \q-\ = -Ib2 = 30 mAdc)
mA mA(1) Applicable from 0.01
to 10
(Pulsed).
(2) Pulse Test: Pulse Length = 30 /*s, Duty Cycle
2N3011
CASE 22, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
NPN SILICON
Refer to 2N2368 for graphs.
Symbol
v (BR)CEO
V (BR)CES
v (BR)CBO
v (BR)EBO
'CES
•bl
hFE
v CE(sat)
Min
12
30
30
5.0
—
-
30
25
12
-
v BE(sat)
0.72
fT
Cobo
ts
{ on
toff
400
-
—
—
—
—
—
—
—
0.4
10
0.4
120
0.20
0.25
0.50
0.30
0.87
1.15
1.60
—
4.0
13
15
20
Vdc
Vdc
Vdc
Vdc
/uAdc
/uAdc
—
Vdc
Vdc
MHz
PF
ns
ns
ns
4-55
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2N3011.PDF ] |
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