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C228E Schematic ( PDF Datasheet ) - Digitron Semiconductors

Teilenummer C228E
Beschreibung SILICON CONTROLLED RECTIFIER
Hersteller Digitron Semiconductors
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Gesamt 4 Seiten
C228E Datasheet, Funktion
C228, C22803, C229 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off state voltage(1)
(TJ = -40 to +125°C)
C228F, C228F3, C229F
C228A, C228A3, C229A
C228B, C228B3, C229B
C228C, C228C3, C229C
C228D, C228D3, C229D
C228E, C228E3, C229E
C228M, C228M3, C229M
VRRM, VDRM
50
100
200
300
400
500
600
Volts
Peak non-repetitive reverse voltage
(TJ = -40 to +125°C)
C228F, C228F3, C229F
C228A, C228A3, C229A
C228B, C228B3, C229B
C228C, C228C3, C229C
C228D, C228D3, C229D
C228E, C228E3, C229E
C228M, C228M3, C229M
75
150
VRSM 300 Volts
400
500
600
720
Forward current RMS
IT(RMS) 35 Amps
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
ITSM 300 Amps
Circuit fusing considerations
(TC = -40 to +125°C, t = 8.3ms)
I2t 370 A2s
Peak gate power
PGM 5 Watts
Average gate power
PG(AV) 0.5 Watts
Peak forward gate current
IGM 2 Amps
Operating junction temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150
°C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate
voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
C228 and C229 SERIES
C228()3 SERIES
Symbol
RӨJC
Maximum
1.70
1.85
Unit
°C/W
Rev. 20150306





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