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PDF RB400VAM-50 Data sheet ( Hoja de datos )

Número de pieza RB400VAM-50
Descripción Schottky Barrier Diode
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! RB400VAM-50 Hoja de datos, Descripción, Manual

Schottky Barrier Diode
RB400VAM-50
Datasheet
Application
General rectification
Dimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17±0.04
0.6±0.1
Land Size Figure (Unit : mm)
1.1
(1)
Features
1) Small mold type (TUMD2M)
2) High reliability
3) Low VF and low IR
00.1
(2)
ROHM : TUMD2M
Manufacture date and factory
TUMD2M
Structure (1)Cathode
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.1
Φ1.5+-00.1
(2) Anode
0.25±0.05
1.53±0.03
Φ1.0+-00.2
0.9±0.08
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty0.5
50 V
Reverse Voltage
VR Direct Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin Wave,
resistive load, Tc=105°C Max.
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
Operating Junction Temperature
Tj
-
40
0.5
3
150
V
A
A
°C
Storage Temperature
Tstg
- -55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage
Reverse Current
Capacitance Between Terminals
VF
IR1
IR2
Ct1
Ct2
IF=0.5A
VR=10V
VR=30V
VR=0V, f=1MHz
VR=10V, f=1MHz
- - 0.55 V
- - 30 A
- - 50 A
- 125 - pF
- 20 - pF
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/6
2015.09 - Rev.B

1 page




RB400VAM-50 pdf
RB400VAM-50
Electrical Characteristic Curves
Data Sheet
0.5
Tj = 125°C
0.4
D = 1/2
0.3
Sin(θ=180)
0.2
0.1
DC
0.0
0
0.2 0.4 0.6 0.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
1
0.50
0.40
Tj = 125°C
0.30
Sin(θ=180)
0.20
D = 1/2
0.10 DC
0.00
0
10 20 30 40
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
50
1000
Rth(j-a)
100
10
Rth(j-c)
Glass epoxy board mounted
IM=10mA
IF=0.2A
time
1
0.001 0.01 0.1
1ms300s
1 10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
1.4
IO
1.2
0A
0V
1.0 DC
0.8
VR t
T
D=t/T
VR=VRM/2
Tj=125°C
D = 1/2
0.6
0.4
Sin(θ=180)
0.2
0.0
0
25 50 75 100 125
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/6
2015.09 - Rev.B

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