DataSheet.es    


PDF RB228NS150 Data sheet ( Hoja de datos )

Número de pieza RB228NS150
Descripción Schottky Barrier Diode
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de RB228NS150 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! RB228NS150 Hoja de datos, Descripción, Manual

Schottky Barrier Diode
RRBB222288NNSS115500
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
(2)
RB228
NS150
1
(1) (3)
lLand Size Figure (Unit : mm)
11
9.9
2.5
2.54
LPDS
2.54
ROHM : LPDS
JEITA : TO263S
1 : Manufacture Date
lStructure
(2) Cathode
lTaping Dimensions (Unit : mm)
(1) Anode
(3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty0.5
150 V
Reverse Voltage
VR Direct Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=100ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating Junction Temperature
Tj
-
150
30
100
150
V
A
A
°C
Storage Temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
VF IF=15A
IR VR=150V
Thermal Resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.88 V
- - 25 mA
- - 2 °C / W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.11 - Rev.A

1 page




RB228NS150 pdf
RB228NS150
lElectrical Characteristic Curves
Data Sheet
10
Rth(j-a)
Rth(j-c)
1
Glass epoxy board mounted
IM=100mA
IF=15A
time
0.1
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
80
IO
0A
0V
60 VR t
T D=t/T
VR=VRM/2
Tj=150°C
DC
40
D = 1/2
20
Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
80
60 DC
40 D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
20 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
20
18
16
14
12
10
8
6 AVE. : 3.9kV
4 AVE. : 1.9kV
2
0 C=200pF C=100pF
R=0W
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.11 - Rev.A

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet RB228NS150.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RB228NS150Schottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar