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Número de pieza | AZ23B27-G | |
Descripción | Small Signal Zener Diodes | |
Fabricantes | Vishay | |
Logotipo | ||
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AZ23-G-Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
21
3
20456
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.7 to 51
5
Pulse current
Dual common anode
UNIT
V
mA
FEATURES
• Dual silicon planar Zener diodes, common
anode
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
2 % tolerance.
• The parameters are valid for both diodes in one
case. VZ and Rzj of the two diodes in one case
is 5 %
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
(part number available on request)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
AZ23C2V7-G3-08 to AZ23C51-G3-08
AZ23-G-series
AZ23B2V7-G3-08 to AZ23B51-G3-08
AZ23C2V7-G3-18 to AZ23C51-G3-18
AZ23B2V7-G3-18 to AZ23B51-G3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.1 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Thermal resistance, junction
to ambient air
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
Ptot
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Zener current
IZ
Operating temperature range
Top
VALUE
300
420
150
-65 to +150
Ptot/VZ
-55 to +150
UNIT
mW
K/W
°C
°C
mA
°C
Rev. 1.4, 04-Mar-14
1 Document Number: 85867
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page www.vishay.com
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
VZ at IZ = 5 mA
0.3
0.2
0.1
25 15
10
8
7
6.2
5.9
5.6
0
-1
- 0.2
0
18124
5.1
3.6 4.7
20 40 60 80 100 120 140 C
Tj
Fig. 7 - Change of Zener Voltage vs. Junction Temperature
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18125
20 40 60 80 100 V
VZ
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
7
ΔVZ 6
5
4
3
2
1
51
43
36
0
-1
0
18126
20 40
IZ = 2 mA
60 80 100 120 140 °C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
AZ23-G-Series
Vishay Semiconductors
V
1.6
1.4
1.2
ΔVZ 1
0.8
ΔVZ = Rzth x IZ
0.6
0.4
0.2
0
- 0.2
- 0.4
18127 1
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
ΔVZ
V
5
ΔVZ = Rzth x IZ
4
3
2
IZ = 5 mA
1
IZ = 2 mA
0
0
18128
20 40 60 80 100 V
VZ
Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
Tj = 25 °C 2.7
3.9 5.6
40
lZ
3.3 4.7
6.8
8.2
30
20
Test
10
current
IZ 5 mA
0
0 1 2 3 4 5 6 7 8 9 10 V
18111
VZ
Fig. 12 - Breakdown Characteristics
Rev. 1.4, 04-Mar-14
5 Document Number: 85867
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet AZ23B27-G.PDF ] |
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