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PDF PBF493R Data sheet ( Hoja de datos )
| Número de pieza | PBF493R | |
| Descripción | HIGH VOLTAGE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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PBF493R
PBF493RS
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
PNP SILICON
Refer to MPSA92 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C '
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
vebo
ic
PD
pd
Tj, T stg
Symbol
Rfljc
Rfljc
PBF493R,RS
300
300
5.0
500
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Symbol
||
Min
Max
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UnTT
Collector-Emitter Breakdown Voltage(1)
(IC = 10 mAdc, Ib = 0)
v (BR)CEO
300
Collector-Base Breakdown Voltage
dC = 100 nAdc, Ie = 0)
v (BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 ^dc, Ic = 0)
Collector Cutoff Current
(VCB = 200 Vdc, Ie = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.1 mAdc, Vce = 1 -0 Vdc)
(IC = 1 mAdc, Vce = 1 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 20 mAdc, lg = 2.0 mAdc)
Base-Emitter Saturation Voltage
(IC = 20 mAdc, \q = 2.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 10 mAdc, Vce = 20 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 20 Vdc, Ie = 0, f = 1.0 MHz)
PBF493RS
All Types
All Types
v (BR)EBO
'CBO
5.0
hFE
VCE(sat)
VBE(sat)
40
40
25
fT
C bo
50
0.25
Vdc
I^Adc
Vdc
0.5
Vdc
0.9
6.0 PF
2-286
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet PBF493R.PDF ] | |
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