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PDF 3N211 Data sheet ( Hoja de datos )
| Número de pieza | 3N211 | |
| Descripción | DUAL GATE MOSFET VHF AMPLIFIER | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3N211 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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3N211-3N213
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain Gate Voltage
Drain Current
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Lead Temperature, 1/16” from Seated Surface for 10 seconds
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG1
VDG2
ID
IG1
IG2
PD
PD
TL
TJ
Tstg
3N211
3N212
3N213
27 35
35 40
35 40
50
±10
±10
360
2.4
1.2
8.0
300
-65 to +175
-65 to +175
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristics
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (1)
(ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc)
Instantaneous Drain Source Breakdown Voltage
(ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc)
Gate 1 – Source Breakdown Voltage (2)
(IG1 = ±10 mAdc, VG2S = VDS = 0)
Gate 2 – Source Breakdown Voltage (2)
(IG2 = ±10 mAdc, VG1S = VDS = 0)
Gate 1 Leakage Current
(VG1S = ±5.0 Vdc, VG2S = VDS = 0)
(VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C)
Gate 2 Leakage Current
(VG2S = ±5.0 Vdc, VG1S = VDS = 0)
(VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C)
Gate 1 to Source Cutoff Voltage
(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µ Adc)
Gate 2 Source to Cutoff Voltage
(VDS = 15 Vdc, VG1S = 0, ID = 20 µAdc)
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (3)
(VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc)
3N211, 3N212
3N213
3N211, 3N212
3N213
3N211, 3N213
3N212
3N211
3N212, 3N213
Symbol
V(BR)DSX
V(BR)DSX
V(BR)G1SO
V(BR)G2SO
IG1SS
IG2SS
VG1S(off)
VG2S(off)
IDSS
Min
25
30
27
35
±6.0
±6.0
-
-
-
-
-0.5
-0.5
-0.2
-0.2
6.0
Max Unit
-
-
Vdc
-
-
Vdc
- Vdc
- Vdc
±10 nAdc
-10 µAdc
±10 nAdc
-10 µAdc
-5.5
-4.0
Vdc
-2.5
-4.0
Vdc
40 mAdc
Rev. 20120705
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3N211.PDF ] | |
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