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Número de pieza | 2N4261UB | |
Descripción | PNP SMALL SIGNAL SILICON TRANSISTOR | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N4261UB (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
DEVICES
2N4261
* Available for JANS only
2N4261UB
2N4261UBC *
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Note: Consult 19500/511 for Thermal Performance Curves.
Value
15
15
4.5
30
0.2
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-72
2N4261
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCB = 15Vdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 2.0Vdc
Symbol Min. Max. Unit
V(BR)CEO
15
ICBO
IEBO
ICEX1
ICEX2
Vdc
10 μAdc
10 μAdc
50 ηAdc
5 ηAdc
3 PIN
2N4261UB
2N4261UBC
(UBC = Ceramic Lid Version)
T4-LDS-0150 Rev. 2 (101161)
Page 1 of 5
1 page 6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Dimensions
Ltr. Inches Millimeters Note Ltr.
Min Max Min Max
BH .046 .071 1.17 1.80
BL .115 .128 2.29 3.25
BW .085 .108 2.16 2.74
LS1
LS2
LW
CL .128 3.25
r
CW .108 2.74
LL1 .022 .038 0.56 0.96
LL2 .017 .035 0.43 0.89
r1
r2
Dimensions
Inches
Millimeters
Min Max Min Max
.036 .040 0.91 1.02
.071 .079 1.81 2.01
.016 .024 0.41 0.61
.008 .203
.012 .305
.022 .559
Note
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Hatched areas on package denote metallized areas
4 Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = connected to the lid braze ring.
5 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. Physical dimensions, surface mount (UBC version, ceramic lid).
T4-LDS-0150 Rev. 2 (101161)
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N4261UB.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N4261UB | Chip Type 2C4261 Geometry 0014 Polarity PNP | Semicoa Semiconductor |
2N4261UB | PNP SMALL SIGNAL SILICON TRANSISTOR | Microsemi |
2N4261UBC | PNP SMALL SIGNAL SILICON TRANSISTOR | Microsemi |
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