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PDF C45C11 Data sheet ( Hoja de datos )
| Número de pieza | C45C11 | |
| Descripción | PNP SILICON EPITAXIAL POWER TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C45C11 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER TRANSISTORS
C45C5,11
TO-220
Designed for Various Specific and General Purpose Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
C45C5
C45C11
Collector -Emitter Voltage
VCEO
45 80
Collector -Emitter Voltage
VCES
55 90
Emitter Base Voltage
VEBO
55
Collector Current Continuous
IC
44
Peak*
ICM 6 6
Base Current
IB 2 2
Power Dissipation @ Ta=25 deg C
PD
1.67 1.67
Power Dissipation @ Tc=25 deg C
30 30
Operating and Storage Junction
Tj, Tstg
-55 to +150 55 to +150
Temprature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
75 75
Junction to Case
Rth(j-c)
4.2 4.2
ELECTRICAL CHARACTERISTICS (TC=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Emitter Sustaining Voltage
VCEO(sus)* IC=100mA, IB=0
C45C5
45 -
C45C11
80 -
Collector Cutt off Current
ICES
VCE=Rated VCES - -
Emitter Cut off Current
IEBO
VEB=5V, IC=0
--
Collector Emitter Saturation Voltage
VCE(Sat)* IC=1A, IB=50mA
--
Base Emitter Saturation Voltage
VBE(Sat)* IC=1A, IB=100mA
-
-
Dc Current Gain
hFE*
IC=0.2A, VCE=1V 40 -
IC=1A, VCE=1V
20 -
Dynamic Characteristics
Transition Frequency
ft VCE=4V, IC=20mA - 40
Collector Output Capacitance
Ccbo
VCB=10V, IE=0
--
f=1MHz
Switching Time
Delay Time
td +tr
- 50
Rise Time
IC= 1A, IB1=1B2
Storage Time
ts
0.1A, VCC=30V,
- 500
Fall Time
tf tp=25 usec
- 50
*Pulse Test Pulse Width =300ms, Duty Cycle=2%
MAX
-
-
10
100
0.5
1.3
120
-
-
125
-
-
-
UNIT
V
V
V
A
A
A
W
W
deg C
deg C
deg C
UNIT
V
V
uA
uA
V
V
MHz
pF
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C45C11.PDF ] | |
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