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Teilenummer | WPM2080 |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 7 Seiten WPM2080
Single P-Channel, -20V, -4.0A, Power MOSFET
VDS (V)
-20
Typical RDS(on) (mΩ)
43 @ VGS=-4.5V
55 @ VGS=-2.5V
WPM2080
Http://www.sh-willsemi.com
Descriptions
The WPM2080 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2080 is Pb-free.
Features
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PD = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
Package
Shipping
WPM2080-3/TR SOT-23-3L 3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/05/30- Rev.1.0
Transient thermal response (Junction-to-Ambient)
2
1
Duty Cycle = 0.5
WPM2080
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Will Semiconductor Ltd. 6 2016/05/30- Rev.1.0
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WPM2080 Schematic.PDF ] |
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