WNMD2182 Datasheet PDF - WillSEMI
| Part Number | WNMD2182 | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | WillSEMI | |
| Logo |  |
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There is a preview and WNMD2182 download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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WNMD2182
WNMD2182
Dual N-Channel, 20V, 9.5A, Power MOSFET
Http//:www.sh-willsemi.com
VDS (V)
Rds(on) (mΩ)
12@ VGS=4.5V
20 14@ VGS=3.1V
17@ VGS=2.5V
ESD HBM 2000V
PDFN2.9×2.8-8L
Descriptions
The WNMD2182 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2182 is Pb-free and
Halogen-free.
D2 D2 D1 D1
8 7 65
1
23
4
S2 G2 S1 G1
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN2.9×2.8-8L
ESD Protected Class-2 （HBM 2000V）
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
8 765
2182
NDYW
1 23 4
2182
ND
YW
= Device Code
= Special Code
= Year & Week
Marking
Order information
Device
Package
Shipping
WNMD2182-8/TR PDFN2.9×2.8-8L 3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/09/08 – Rev.1.0
|
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1200
1000
800
600
400
200
0
0
V =0
GS
f=1MHz
C
iss
C
oss
C
rss
3 6 9 12
V -Source to Source Voltage(V)
SS
Capacitance
15
4.5
V =4.5V
GS
V =10V
DS
I =7A
D
3.0
1.5
0.0
0369
Gate Charge Characteristics (nC)
Gate Charge Characteristics
12
WNMD2182
10
8
6
T=150oC
4
T=25oC
2
0
0.0 0.2 0.4 0.6 0.8 1.0
V -Source to Drain Voltage (V)
SD
Body diode forward voltage
100
Limited by RDS(on)
10
100us
1 1ms
10ms
0.1
TA=25oC
Single Pulse
BVDSS Limited
100ms
1s
10s
DC
0.01
0.1 1 10
V -Drian-to-Source Votage(V)
DS
100
Safe operating power
1
Duty Cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E-6
1E-5
1E-4
Single Pulse
1E-3
0.01
0.1
Square Wave Pulse Duration (s)
1
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 102°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5 2016/09/08 – Rev.1.0
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for WNMD2182 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ WNMD2182.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| WNMD2180 | The function is MOSFET ( Transistor ). WillSEMI | |
| WNMD2182 | The function is MOSFET ( Transistor ). WillSEMI | |
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