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Teilenummer | WNMD2176 |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 6 Seiten WNMD2176
Dual N-Channel, 20V, 2.6A, Power MOSFET
WNMD2176
www.sh-willsemi.com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.5V
76@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2176 is N-Channel enhancement
MOS Field Effect Transistor.Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge.This device is suitable for use
in DC-DC conversion,power switch and charging
circuit. Standard Product WNMD2176 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
SOT-23-6L
D1 S1 D2
6 54
1 23
G1 S2 G2
Pin configuration (Top view)
6 54
2176
NDYW
1 23
2176
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Driver for Relay, Solenoid, Motor, LED etc.
Power supply converters circui t
Load/Power Switching for portable device
Marking
Order information
Device
Package
Shipping
WNMD2176-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.0
Package outline dimensions
SOT -23-6L
WNMD2176
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
θ
Dimensions In Millimeters
Min Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0° 8°
Will Semiconductor Ltd.
6
Dimensions In Inches
Min Max
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0° 8°
Jan, 2015 - Rev.1.0
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WNMD2176 Schematic.PDF ] |
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