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PDF WNM3025 Data sheet ( Hoja de datos )
| Número de pieza | WNM3025 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNM3025 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WNM3025
Single N-Channel, 30V, 0.23A, Power MOSFET
VDS (V)
30
Typical RDS(on) (Ω)
1.2 @VGS=10V
1.4 @VGS=4.5V
WNM3025
Http://www.sh-willsemi.com
G
S
D
Descriptions
The WNM3025 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3025 is Pb-free.
DFN1006-3L
D
Features
GS
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
J = Device Code
* = Month(A~z)
Marking
Order information
Device
Package
Shipping
WNM3025-3/TR DFN1006-3L 10K/Tape&Reel
Will Semiconductor Ltd. 1 2016/10/21- Rev.1.0
1 page  
WNM3025
40
F = 1MHZ
30 Ciss
20 Coss
10 Crss
0
0 5 10 15 20
V -Drain to Source Voltage (V)
DS
Capacitance
80
70
60
50
40
30
20
10
0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
Pulse width (S)
T =150oC
J(MAX)
TA=25oC
1 10 100
1.0
-55OC
25OC
0.8 150OC
0.6
0.4
0.2
0.0
0.0
0.2 0.4 0.6 0.8 1.0
VSD- Source to Drain Voltage(V)
1.2
Body diode forward voltage
10
1 Limit by Rdson
0.1 100us
10s 1ms
10ms
0.01
T =25oC
A
Single Pulse
DC
100ms
1s
1E-3
0.1
1 10 100
VDS-Drain to Source Voltage(V)
*V >minimum V at which R is specified
GS GS DS(ON)
Single pulse power
10
8
6
4
2
0
0.0
VDS= 30V
ID =0.1A
0.5 Qg1(.n0C)
1.5
Safe operating power
2.0
Will Semiconductor Ltd.
Gate charge Characteristics
5
2016/10/21- Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM3025.PDF ] | |
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