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PDF WNM2046C Data sheet ( Hoja de datos )
| Número de pieza | WNM2046C | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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WNM2046C
Single N-Channel, 20V, 0.6A, Power MOSFET
VDS (V)
20
Typical RDS(on) (Ω)
0.42 @ VGS =4.5V
0.58 @ VGS=2.5V
0.84 @ VGS=1.8V
Descriptions
The WPM2046C is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2046C is Pb-free.
WNM2046C
Http://www.willsemi.com
G
S
D
DFN1006-3L
D
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
6 = Device Code
* = Month(A~z)
Marking
Order information
Device
Package
Shipping
WNM2046C-3/TR DFN1006-3L 10K/Tape&Reel
Will Semiconductor Ltd. 1 2016/10/09- Rev.1.0
1 page  
WNM2046C
60
VGS=0V
50 F=1MHz
40
30
Ciss
20 Coss
Crss
10
0
2 4 6 8 10
VDS-Drain Voltage (V)
Capacitance
80
70
60
50
40
30
20
10
0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
Pulse width (S)
T =150oC
J(MAX)
T =25oC
A
1 10 100
Single pulse power
0.8
0.6
T=150oC
0.4
T=25oC
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD-Source-to-Drain Voltage (V)
Body diode forward voltage
10
Limit by Rdson
1
0.1 10s
T =25oC
A
0.01 Single Pulse
DC
100us
1ms
10ms
100ms
1s
0.1 1 10
VDS-Drain to Source Voltage(V)
*V >minimum V at which R is specified
GS GS DS(ON)
100
Safe operating power
4 VGS=4.5V, VDS=10V, ID=0.54A
3
2
1
0
0.0 0.4 0.8 1.2
Qg (nc)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 2016/10/09- Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM2046C.PDF ] | |
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