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Teilenummer | WSB5557Z |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | WillSEMI | |
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Gesamt 3 Seiten WSB5557Z
Schottky Barrier Diode
Features
100mA Average rectified forward current
Low forward voltage
Ultra-low leakage current
Small package DFN0603-2L
Applications
Low Current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward surge current (8.3ms single sine pluse)
Junction temperature
Operating temperature
Storage temperature
WSB5557Z
Http://www.sh-willsemi.com
DFN0603-2L(Bottom View)
Circuit
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
30
30
100
2
150
-40 ~ 150
-40 ~ 150
Unit
V
V
mA
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Reverse Voltage
Forward Voltage
Reverse current
Junction capacitance
Thermal Resistance
VR
VF
IR
CJ
Rθ(JA)
IR=100uA
IF=1mA
IF=10mA
VR=10V
VR=30V
VR=5V, F=1MHz
Junction to Ambient
Order Information
Device
WSB5557Z-2/TR
Package
DFN0603-2L
Min.
30
Typ.
13
Max.
0.36
0.46
0.3
0.5
650
Unit
V
V
V
uA
uA
pF
K/W
Marking
*H(1)
Shipping
10000/Reel&Tape
Note 1:*= Month Code(A~Z); H= Device code;
Will Semiconductor Ltd.
1 2015/3/4 - Rev.1. 0
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ WSB5557Z Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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