|
|
Teilenummer | WSB5549N |
|
Beschreibung | Schottky Barrier Diode | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 3 Seiten WSB5549N
Schottky Barrier Diode
Features
High switching speed
Low leakage current
Small package DFN1006-3L
Applications
High-speed switching
General-purpose switching
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward surge current
Junction temperature
Operating temperature
Storage temperature
WSB5549N
Http://www.willsemi.com
DFN1006-3L(Bottom View)
Circuit
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
100
100
150
1(1)
150
-65 ~ 150
-65 ~ 150
Unit
V
V
mA
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Reverse Voltage Per diode
Forward Voltage Per diode
Reverse current Per diode
Junction capacitance
Thermal Resistance
Symbol
VR
VF
IR
CJ
Rθ(JA)
Condition
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=70V
VR=100V
VR=5V, F=1MHz
Junction to Ambient
Min.
100
Typ.
3.4
Max.
0.5
0.6
0.8
1.2
50
0.5
1
500
Unit
V
V
V
V
V
nA
uA
uA
pF
K/W
Will Semiconductor Ltd. 1 2015/4/24- Rev 1.0
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ WSB5549N Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WSB5549N | Schottky Barrier Diode | WillSEMI |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |