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WSB5549N Schematic ( PDF Datasheet ) - WillSEMI

Teilenummer WSB5549N
Beschreibung Schottky Barrier Diode
Hersteller WillSEMI
Logo WillSEMI Logo 




Gesamt 3 Seiten
WSB5549N Datasheet, Funktion
WSB5549N
Schottky Barrier Diode
Features
High switching speed
Low leakage current
Small package DFN1006-3L
Applications
High-speed switching
General-purpose switching
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward surge current
Junction temperature
Operating temperature
Storage temperature
WSB5549N
Http://www.willsemi.com
DFN1006-3L(Bottom View)
Circuit
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
100
100
150
1(1)
150
-65 ~ 150
-65 ~ 150
Unit
V
V
mA
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Reverse Voltage Per diode
Forward Voltage Per diode
Reverse current Per diode
Junction capacitance
Thermal Resistance
Symbol
VR
VF
IR
CJ
Rθ(JA)
Condition
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=70V
VR=100V
VR=5V, F=1MHz
Junction to Ambient
Min.
100
Typ.
3.4
Max.
0.5
0.6
0.8
1.2
50
0.5
1
500
Unit
V
V
V
V
V
nA
uA
uA
pF
K/W
Will Semiconductor Ltd. 1 2015/4/24- Rev 1.0





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