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Teilenummer | WPM5001 |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 7 Seiten WPM5001
Single P-Channel, -50V, -0.3A, Power MOSFET
VDS (V)
-50
Typical Rds(on) (Ω)
3.0@ VGS= –10V
3.5@ VGS= –5V
WPM5001
Http//:www.sh-willsemi.com
Descriptions
The WPM5001 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM5001 is Pb-free and
Halogen-free.
Features
SOT-23
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
W=Willsemi
01= Device Code
*= Month (A~Z)
Marking
Order information
Device
WPM5001-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2014 - Rev.1.0
WPM5001
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
Single pulse
1E-4
1E-6 1E-5 1E-4
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 190°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
1E-3 0.01 0.1 1 10
Square Wave Pulse Duration (sec)
100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Feb, 2014 - Rev.1.0
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WPM5001 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WPM5001 | MOSFET ( Transistor ) | WillSEMI |
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