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PDF WPM3401 Data sheet ( Hoja de datos )
| Número de pieza | WPM3401 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM3401 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WPM3401
Single P-Channel, -30V, -4.6A, Power MOSFET
VDS (V)
-30
Max RDS (on) (mΩ)
53@ VGS=-10V
56@ VGS=-4.5V
WPM3401
www.sh-willsemi.com
Descriptions
The WPM3401 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-
state resistance. These devices are particularly suited
for low voltage application, notebook computer power
management and other battery powered circuits where
high-side switching.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23-3L
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
WP1U
12
WP1= Specific Device Code
U = Date Code
Marking
Order information
Device
Package
Shipping
WPM3401-3/TR SOT-23-3L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Nov, 2014 - Rev.2.3
1 page  
10
VDD=-10V ID=-4.3A
8
6
4
2
0
0 5 10 15 20 25
Qg(nC)
Gate Charge Characteristics
100 TJ(Max)=150°C
TA=25°C
RDS(ON)
10 limited
10Ps
100Ps
0.1s 1ms
10ms
1 1s
10s
DC
0.1
0.1
1 10
-VDS (Volts)
Maximum Forward Biased Safe
Operating Area (Note E)
100
WPM3401
2000
f=1MHZ
1600
Ciss
Coss
Crss
1200
800
400
0
0 3 6 9 12 15
-V -Drain to Source Voltage(V)
DS
Capacitance Characteristics
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZTJA.RTJA
RTJA=70°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
10
Normalized Maximum Transient Thermal Impedance
100
1000
Will Semiconductor Ltd. 5 Nov, 2014 - Rev.2.3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WPM3401.PDF ] | |
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