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PDF WPM3012 Data sheet ( Hoja de datos )
| Número de pieza | WPM3012 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM3012 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM3012
Single P-Channel, -30V, -3.1A, Power MOSFET
VDS (V)
-30
Rds(on) (ȍ)
0.058@ VGS=10V
0.080@ VGS=4.5V
Descriptions
The WPM3012 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3012 is Pb-free and
Halogen-free.
WPM3012
Http//:www.willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
3
W32*
12
W32= Device Code
* = Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order information
Device
Package
Shipping
WPM3012-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Apr, 2012 - Rev.1.1
1 page  
WPM3012
1000
1.0
V =0 f=1MHZ
GS
800 0.8
T=1500C
600 0.6
400 0.4
Crss
Cout
T=250C
200 Cin 0.2
0
0 4 8 12 16 20
-V - Drain to Source Voltage (V)
DS
Capacitance
10
8
0.4 0.5 0.6 0.7 0.8 0.9
-V - Source to Drain Voltage(V)
SD
Body diode forward voltage
100
Limited by RDS(on)
10
100 μs
6
4
2
0
0.01
1 1 ms
10 ms
TA = 25 °C
0.1 1
10 100
Time (s)
Single pulse power
1000
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe operating power
10
V =-10V, I =-3.1A, V =-15V
9 GS
D
DS
8
7
6
5
4
3
2
1
0
0369
Qg(nc)
12 15
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Apr, 2012 - Rev.1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM3012.PDF ] | |
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