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PDF WPM2065 Data sheet ( Hoja de datos )

Número de pieza WPM2065
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
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No Preview Available ! WPM2065 Hoja de datos, Descripción, Manual

WPM2065
Single P-Channel, -20V, -6.9A, Power MOSFET
VDS (V) Typical Rds(on) ()
0.017@ VGS=-4.5V
-20 0.022@ VGS=-2.5V
0.032@ VGS=-1.8V
ESD Rating: 4000V HBM
Descriptions
The WPM2065 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2065 is Pb-free and
Halogen-free.
WPM2065
Http://www.sh-willsemi.com
DD G
DS
DD S
DFN2X2-6L
D1
D2
G3
6D
5D
4S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
HBM ESD protection > 4kV
Small package DFN2X2-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
2065
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WPM2065-6/TR DFN2X2-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 2014/9/1 – Rev. 1.2

1 page




WPM2065 pdf
10000
1000
100
0
Ciss
f=1MHZ
VGS=0V
Coss
Crss
5 10 15
-VDS-Drain to Source Voltage (V)
Capacitance
20
100
TJ(Max)=150C
80 TA=25C
60
40
20
1E-4
1E-3
0.01 0.1
1
Pulse width (S)
10
100 1000
Single pulse power
WPM2065
30
25
20 T=150C
15
T=25C
10
5 T=-55C
0
0.0 0.2 0.4 0.6 0.8 1.0
-VSD- Source to Drain Voltage (V)
Body diode forward voltage
100
10 Limit by Rdson
1
0.1 TA=25C
Single Pulse
100us
1ms
10ms
DC
Bvdss Limit
100ms
1s
10s
0.01
0.01
0.1 1 10
-V - Drain Source Voltage (V)
DS
* VGS> minimum VGS at which RDS(on) is specified
100
Safe operating power
5
VDS= -10V
4 ID=-6.9A
3
2
1
0
2 4 6 8 10 12 14 16 18 20 22
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd.
5
2014/9/1 – Rev. 1.2

5 Page










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