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PDF WPM1485 Data sheet ( Hoja de datos )
| Número de pieza | WPM1485 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WPM1485
Single P-Channel, -12V, -7.4A, Power MOSFET
VDS (V)
-12
Rds(on) (Ω)
0.015@ VGS=–4.5V
0.020@ VGS=–2.5V
0.030@ VGS=–1.8V
Descriptions
The WPM1485 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM1485 is Pb-free and
Halogen-free.
WPM1485
Http//:www.willsemi.com
DFN2×2-6L
D DS
6 54
D
S
1 23
D DG
Features
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2×2-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WLSI = Willsemi
D = Device Code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WPM1485-6/TR DFN2×2-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Aug, 2013 - Rev.1.2
1 page  
WPM1485
55
f=1MHz
4
4
3
3 125oC
25oC
2 CISS
COSS
1
C
RSS
2
0
02468
-VDS-Drain to Source Voltage(V)
Capacitance
30
25
20
15
10
5
10
1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-VSD-Source-to Drain Voltage(V)
Body diode forward voltage
100
Limited by RDS(on)
100 µs
10
1 ms
10 ms
1
100 ms
1s
TA = 25 °C
0.1 Single Pulse
10 s
DC
BVDSS Limited
0
0.001
0.01
0.1 1 10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe Operating Area, Junction-to-Ambient
4.5
4.0 ID=-7.4A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20 25 30 35
Q g (nc)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Aug, 2013 - Rev.1.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM1485.PDF ] | |
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