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Teilenummer | WNMD2173 |
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Beschreibung | Dual N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
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Gesamt 7 Seiten WNMD2173
WNMD2173
Dual N-Channel, 20V, 6A, Power MOSFET
www.sh-willsemi.com
Vsss (V)
Typ Rss(on) (mΩ)
26@ VGS=4.5V
27@ VGS=4.0V
20
30@ VGS=3.1V
33@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2173 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2173 is available in
CSP 4L package. Standard Product WNMD2173 is
Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package CSP 4L
MOSFET1
Gate 1
MOSFET2
Gate 2
Gate
Protection
Diode
Source 1
Body Diode
CSP 4L
Source 2
43
73
YW
12
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
73 = Device Code
Y = Year
W = Week(A~z)
Pin configuration (TOP view)& Marking
Applications
Lithium-Ion battery protection circuit
Order information
Device
WNMD2173-4/TR
Package
CSP-4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.3
100
TEST CIRCUIT 6
V =0V
GS
VGS=2.5V
10
1
0.5 1.0 1.5
VFS-S-Source to Source Voltage-V
SOURCE TO SOURCE DIODE FORWARD VOLTAGE
10
TEST CIRCUIT 3
Vss=10V
1
WNMD2173
125oC
0.1 75oC
25oC
-25oC
0.01
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V -Gate to Source Voltage-V
GS
FORWARD TRANSFER CHARACTERISTICS
1.4
5
TEST CIRCUIT 9
V =4.5V,
4
GS
V =10V,
SS
IS=6A
3
2
1
0
0 5 10
Qg(nC)
15
20
DYNAMIC INPUT CHARACTERISTICS
Will Semiconductor Ltd. 6 Jan, 2015 - Rev.1.3
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNMD2173 Schematic.PDF ] |
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