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WNMD2162A Schematic ( PDF Datasheet ) - Will Semiconductor

Teilenummer WNMD2162A
Beschreibung Dual N-Channel MOSFET
Hersteller Will Semiconductor
Logo Will Semiconductor Logo 




Gesamt 7 Seiten
WNMD2162A Datasheet, Funktion
WNMD2162A
Dual N-Channel, 20V, 4.8A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω)
0.014@ VGS=4.5V
0.015@ VGS=3.1V
0.016@ VGS=2.5V
The WNMD2162A is Dual N-Channel
enhancement MOS Field Effect Transistor. Uses
advanced trench technology and design to provide
excellent RDS (ON) with low gate charge. This device is
suitable for use in DC-DC conversion, power switch
and charging circuit. Standard Product WNMD2162A
is Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN2.9×2.8-8L
WNMD2162A
Http://www.sh-willsemi.com
PDFN2.9×2.8-8L
D2 D2 D1 D1
8 7 65
1 23 4
S2 G2 S1 G1
Pin configuration (Top view)
8 765
2162A
YYWW
1 2 34
2162A = Device Code
YY = Year
WW = Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Marking
Order information
Device
WNMD2162A-8/TR
Package
PDFN
2.9×2.8-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.1






WNMD2162A Datasheet, Funktion
WNMD2162A
1
Duty Cycle=0.5
0.1
0.01
1E-6
0.2
0.1
0.05
0.02
1E-5
1E-4
Single Pulse
1E-3
0.01
0.1
Square Wave Pulse Duration (s)
1
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 102°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Jan, 2015 - Rev.1.1

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