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WNMD2155 Schematic ( PDF Datasheet ) - Will Semiconductor

Teilenummer WNMD2155
Beschreibung Dual N-Channel MOSFET
Hersteller Will Semiconductor
Logo Will Semiconductor Logo 




Gesamt 6 Seiten
WNMD2155 Datasheet, Funktion
WNMD2155
WNMD2155
Dual N-Channel, 20V, 7.9A, Power MOSFET
Http//:www.willsemi.com
VDS (V)
Rds(on) (ȍ)
0.018@ VGS=10V

0.020@ VGS=4.5V
20
0.025@ VGS=2.5V
0.031@ VGS=1.8V
Descriptions
The WNMD2155 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2155 is Pb-free.
SOP-8L
D1 D1 D2
8 76
D2
5
Features
z Trench Technology
1 234
S1 G1 S2 G2
Pin configuration (Top view)
8 7 65
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
WNM2155
YYWW
1 2 34
=Logo
WNM2155 = Device Code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WNMD2155-8/TR SOP-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2014 - Rev.1.2






WNMD2155 Datasheet, Funktion
Package outline dimensions
SOP-8L
WNMD2155
Symbol
A
A1
A2
b
C
D
E
E1
e
L
\
©
Will Semiconductor Ltd.
Min.
1.47
0.10
0.33
0.19
4.80
5.80
3.80
0.38
0e
Dimensions in millimeter
Typ.
1.60
1.45
0.41
0.20
4.85
6.00
3.90
1.27
0.71
Max.
1.73
0.25
0.51
0.25
4.95
6.20
4.00
1.27
0.076
8e
6 Dec,2014 - Rev.1.2

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