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Teilenummer | WNM4153 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
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Gesamt 6 Seiten WNM4153
N-Channel, 20V, 0.88A, Small Signal MOSFET
VDS (V)
20
RDS(on) (Ω)
0.220 @ VGS=4.5V
0.260 @ VGS=2.5V
0.320 @ VGS=1.8V
Descriptions
The WNM4153 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
DC-DC conversion applications. Standard Product
WNM4153 is Pb-free.
Features
Trench N-Channel
Supper high density cell design for extremely low
Rds(on)
Exceptional ON resistance and maximum DC
current capability
Small package design with SOT-523
WNM4153
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3F
12
N3 = Device Code
F = Month
Marking
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for potable device
Order Information
Device
Package
WNM4153-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 May, 2012 - Rev. 2.0
Package Outline Dimensions
SOT-523
WNM4153
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
θ
Will Semiconductor Ltd.
Dimension in Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500 Typ.
0.900
1.100
0.400 Ref.
0.260
0o
0.460
8o
6 May, 2012 - Rev. 2.0
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WNM4153 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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