|
|
PDF WNM4002 Data sheet ( Hoja de datos )
| Número de pieza | WNM4002 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de WNM4002 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
WNM4002
Small Signal N-Channel, 20V, 0.3A, MOSFET
V(BR)DSS
20 V
RDS(on) Typ.
1.4 @ 4.5V
2.2 @ 2.5V
3.8 @ 1.8V
Descriptions
The WNM4002 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
small signal switch. Standard product WNM4002 is
Pb-free.
Features
z Trench N-Channel
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with SOT-523
WNM4002
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3 *
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
Order Information
Device
Package
WNM4002-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec,2011 - Rev. 1.5
1 page  
WNM4002
100
80
Ciss
60
10
VDS = 6 V
ID = 10 mA
8
6
40
Coss
20
0 Crss
0
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
4
2
0
0.0 0.5 1.0 1.5 2.0
Qg - Total Gate Charge (nC)
Gate Charge
1000
TJ = 125 °C
100
TJ = 25 °C
TJ = - 55 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
Limited by RDS(on)*
IDM Limited
1
100 μs
0.1
ID(on)
Limited
1 ms
10 ms
0.01
TA = 25 °C
Single Pulse
100 ms
1 s, 10 s
DC
0.001
0.1
VDSS Limited
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe Operation Area, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PD
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance,
Junction-to-Ambient
Will Semiconductor Ltd. 5 Dec,2011 - Rev. 1.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM4002.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| WNM4001 | Small Signal N-Channel MOSFET | Will Semiconductor |
| WNM4002 | N-Channel MOSFET | Will Semiconductor |
| WNM4006 | N-Channel MOSFET | Will Semiconductor |
| WNM4006 | N-Channel MOSFET |  TY Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |