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PDF WNM3008 Data sheet ( Hoja de datos )
| Número de pieza | WNM3008 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNM3008 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.044@ VGS=10V
0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3008 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
W38*
W38
*
= Device Code
= Month
Marking
Order information
Device
Package
Shipping
WNM3008-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2
1 page  
WNM3008
400
F=1MHZ
300
C
iss
C
oss
C
rss
200
100
0
0 3 6 9 12 15
V Drain-to-Source Voltage (V)
DS
3.0
2.5 250C
2.0
1.5
1.0
0.5
0.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2
V -Source-to-Drain Voltage(V)
sd
1.4
Capacitance
10
8
6
4
2
0
0.01
0.1
TA = 25 °C
1 10
Time (s)
100 1000
Single pulse power
12
V =15V,I =3.1A
DS D
10
Body diode forward voltage
100
Limited by RDS(on)
10
100 μs
1 1 ms
10 ms
0.1
0.01
0.1
TA = 25 °C
Single Pulse
BVDSS
Limited
100 ms
1s
10s
DC
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe operating power
8
6
4
2
0
0246
Q ( nC)
g
Gate Charge Characteristics
8
Will Semiconductor Ltd. 5 Feb, 2012 - Rev.1.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM3008.PDF ] | |
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