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Teilenummer | WNM3003 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 7 Seiten WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
WNM3003
Http://www.willsemi.com
V(BR)DSS
30V
Rds(on)
()
0.033@ 10V
0.033@ 10V
0.043 @ 4.5V
Descriptions
The WNM3003 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3003 is Pb-free.
Features
SOT-23
D
3
12
GS
Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WT3*
WT3
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order Information
Device
Package
WNM3003-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.1
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10ï4
Single Pulse
10ï3
10ï2
10ï1
1
Square Wave Pulse Duration (sec)
WNM3003
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 132_C/W
3. TJM ï TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
6 Dec,2011 - Rev.1.1
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNM3003 Schematic.PDF ] |
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