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Teilenummer | WNM2034 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 7 Seiten WNM2034
N-Channel, 20V, 3.6A, Power MOSFET
WNM2034
Http://www.willsemi.com
VDS (V)
20
Rdson (ȍ)
0.037 @ 10V
0.045 @ 4.5V
Descriptions
The WNM2034 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM2034 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
SOT-23
D
3
12
GS
Configuration (Top View)
W34*
W34
*
= Device Code
= Month (A~Z)
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
Order Information
Device
Package
WNM2034-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.2
WNM2034
1
Duty Cycle = 0.5
1
0.05.2 D = 0.5
0.2 0.2
0.10.1
0.1
0.10.05
0.020.05
0.05
0.02
0.01
0.01
0.0005.02
Single Pulse
0.002
0.001
0.0001
0.01
10-4
Single0.P00u1lse
10-3
0.01
10-2
0.1
t1 , TIME (sec)
1
10-1
1
Square Wave Pulse Duration (s)
R θJA (t) = r(t) * RθJA
NotResθ:JA = 270 °C/W
P(pk)PDM
t1 t 2t1
12T..DJDPu-eutTyrtyAUCCny=cyitPlceBle,a*t,D2sRDe=θ==Jt1AR/(tt2th)ttJ12A =140 °C/W
10 3. TJM - TA = PDM1Z0th0JA(t) 300
4. Surface Mounted
10 100 1000
Transient Thermal Response
Will Semiconductor Ltd.
6 Dec,2011 - Rev.1.2
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNM2034 Schematic.PDF ] |
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