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WNM2020 Schematic ( PDF Datasheet ) - Will Semiconductor

Teilenummer WNM2020
Beschreibung N-Channel MOSFET
Hersteller Will Semiconductor
Logo Will Semiconductor Logo 




Gesamt 6 Seiten
WNM2020 Datasheet, Funktion
WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.320@ VGS=1.8V
WNM2020
Http//:www.willsemi.com
Descriptions
SOT-23
The WNM2020 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WNM2020 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
D
3
12
GS
Pin configuration (Top view)
3
W28*
12
W28 = Device Code
* = Month (A~Z)
Marking
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
Order information
Device
Package
Shipping
WNM2020-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd.
1
Nov, 2012 - Rev.1.4
3






WNM2020 Datasheet, Funktion
Package outline dimensions
SOT-23
WNM2020
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
©
Will Semiconductor Ltd.
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0e
Dimensions in millimeter
Typ.
1.025
0.050
0.975
0.400
0.115
2.900
1.300
2.400
0.950TYP
1.900
0.550REF
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8e
6 Nov, 2012 - Rev.1.4
3

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