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PDF CBSL150 Data sheet ( Hoja de datos )
| Número de pieza | CBSL150 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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CBSL150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL150 is Designed for 900
MHz Class AB Cellular Base Station
Amplifiers.
FEATURES:
• Internal Input/Output Matching
• PG = 9.0 dB Typ. at 150 W/ 900 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 25 A
VCEO
28 V
VCES
60 V
VEBO
PDISS
TJ
TSTG
θJC
3.5 V
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.6 OC/W
PACKAGE STYLE .400 BAL FLG (C)
.080x45° A B
FULL R
(4X).060 R
E
D
C
.1925
I
F
G
H
N
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.220 / 5.59
.120 / 3.05
.380 / 9.65
.780 / 19.81
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
.210 / 5.33
.435 / 11.05
1.090 / 27.69
.395 / 10.03
.850 / 21.59
M
L
JK
MAXIMUM
inches / mm
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10586
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 100 mA
BVCER
IC = 100 mA
RBE = 200 Ω
BVCES
IC = 50 mA
BVEBO
IE = 10 mA
ICES VCE = 30 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM
26
35
60
3.5
30
TYPICAL
45
MAXIMUM
10
120
UNITS
V
V
V
V
mA
---
PG
IMD
ηC
VCC = 26 V
POUT = 150 W
ICQ = 2 X 150 mA
f = 960 MHz
8.0
35
dB
-28 dBc
%
ψ VSWR = 5:1 at all phase angles
No Degradation in Output Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet CBSL150.PDF ] | |
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