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PDF EM5812 Data sheet ( Hoja de datos )
| Número de pieza | EM5812 | |
| Descripción | Step-Down Converter | |
| Fabricantes | Excelliance MOS | |
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12A 5V/12V Step-Down Converter
EM5812/A
General Description
EM5812/A is a synchronous rectified PWM
controller with a built in high-side power MOSFET
operating with 5V or 12V supply voltage. It
achieves 10A continuous output current with
excellent load and line regulation. This device
operates at 200/300kHz and provides an optimal
level of integration to reduce size and cost of the
power supply.
This part includes internal soft start, internal
compensation networks, over current protection,
under voltage protection, and shutdown function.
This part is available in SOP-8 package.
Ordering Information
Part Number
EM5812GE
EM5812AGE
Features
Package
SOP-8 EP
SOP-8 EP
Frequency
200kHz
300kHz
Applications
Notebook & Netbook
Graphic Cards & MB
Low Voltage Logic Supplies
Pin Configuration
Typical Application Circuit
Operate from 5V to 12V Voltage Supply
15mΩ Internal Power MOSFET Switch
0.6V VREF with 1.5% Accuracy
Voltage Mode PWM Control
200/300kHz Fixed Frequency Oscillator
0% to 80% Duty Cycle
Internal Soft Start
Over Current Protection
Integrated Bootstrap Diode
Adaptive Non-Overlapping Gate Driver
Under Voltage Protection
Over Voltage Protection
2012/10/04
A.3
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1 page  
Electrical Characteristics
VCC=12V, TA=25℃, unless otherwise specified
Parameter
Symbol
Test Conditions
EM5812/A
Min Typ Max Units
VCC Supply Section
VCC Supply Voltage
Supply Current
Quiescent Supply Current
VCC Power on Reset Threshold
VCC Power on Reset Hysteresis
VIN Supply Section
VIN Power on Reset Threshold
Internal Oscillator
VCC
ICC
ICCQ
VCCRTH
VCCHYS
LGATE open, Switching.
No Switching.
VINTH
4.5 13.2 V
10 mA
2 mA
4 4.2 4.4 V
0.2 V
1.5 V
Free Running Frequency
Ramp Amplitude
Error Amplifier
FSW
△VOSC
EM5812
EM5812A
170 200 230 KHz
255 300 345 KHz
1 Vp-p
Open Loop DC Gain
Gain-Bandwidth Product
AO
GBW
Guaranteed by Design
Guaranteed by Design
55 70
10
dB
MHz
Slew Rate
SR Guaranteed by Design
36
V/us
Trans-conductance
PWM Controller Gate Drivers
gm
Guaranteed by Design
0.2 0.7 mS
Lower Gate Sourcing Current
Lower Gate Sinking Current
Lower Gate RDS(ON) Sinking
PHASE Falling to LGATE Rising
Delay
ILG_SRC
ILG_SNK
RLG_SNK
VCC – VLGATE = 6V
VLGATE = 6V
VLGATE = 0.1V
VCC = 12V; VPHASE < 1.2V to VLGATE >
1.2V
-1
1.5
24
30 90
A
A
Ω
ns
LGATE Falling to PHASE Rising
Delay
VCC = 12V; VLGATE < 1.2V to VPHASE >
1.2V
30 90 ns
High-Side MOSFET
Switch ON Resistance
Reference Voltage
RDS(ON)
VCC = 12V
18 mΩ
Nominal Feedback Voltage
Enable Voltage
VFB
0.591 0.6 0.609 V
EN Enable Threshold
Protection section
VEN
0.3 0.35 V
FB Under Voltage Protection
VFB_UVP FB falling
55 65 75 %
FB Over Voltage Protection
VFB_OVP FB rising
115 130 145 %
VCC Over Voltage Protection
VCC_OVP
16 17 18 V
Over Current Threshold
VOCP
-425 -375 -325 mV
Soft-Start Interval
Temperature Shutdown
TSS
TSD Guaranteed by Design
2.4 3.6 5.4 ms
150 165
℃
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
2012/10/04
A.3
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet EM5812.PDF ] | |
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