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Número de pieza | EMB50P03VAT | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB50P03VAT (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
50mΩ
ID
‐4.5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL
EMB50P03VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
±20
‐4.5
‐3.5
‐18
2.08
1.33
‐55 to 150
V
A
W
°C
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
12
°C / W
60
2015/7/23
p.1
1 page EMB50P03VAT
Gate Charge Characteristics
10
I D = ‐4.5A
8
VD S = ‐5V
‐10V
6
‐15V
4
2
0
0 2 4 6 8 10 12
Q g ,Gate Charge( nC )
Maximum Safe Operating Area
100
10 R D S (O N ) Limit
10μs
100μs
1ms
1
10ms
100ms
1s
DC
0.1
VG S = ‐10V
Single Pulse
R J A = 60°C/W
T A = 25°C
0.01
0.1 1 10 100
‐VD S ‐ Drain‐Source Voltage( V )
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
Ciss
f = 1MHZ
VG S = 0V
Coss
Crss
5 10 15 20 25 30
‐VD S Drain‐Source Voltage( V )
600
500
S in g le P u lse M a xim u m P o w e r D issip atio n
S in g le P u lse
Rθ J A = 6 0 ° C / W
T A = 2 5 ° C
400
300
200
100
0
0 .0 0 0 0 1 0 .0 0 0 1
0 .0 0 1
0 .0 1
t 1 ,T im e ( s e c )
0 .1
1
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
Notes:
0.02
0.01
0.01
Single Pulse
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.001
10 ‐5
10‐4
10‐3
10 ‐2
10‐1
1
10 100
t 1 ,Time (sec)
2015/7/23
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB50P03VAT.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB50P03VAT | Field Effect Transistor | Excelliance MOS |
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