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Teilenummer | EMF50N03M |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
50mΩ
ID 2.2A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Ambient
RJA
Junction‐to‐Lead
RJL
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/3/15
EMF50N03M
LIMITS
±12
2.2
1.65
14
0.29
0.19
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
425
320
UNIT
°C / W
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMF50N03M Schematic.PDF ] |
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