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Número de pieza | EMD04N04H | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD04N04H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
4mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N04H
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=80A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±30
80
48
160
80
320
160
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=20V, L=0.1mH, VG=10V, IL=50A, Rated VDS=40V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2015/1/12
p.1
1 page EMD04N04H
Gate Charge Characteristics
10
I D = 20A
8
VD S = 10V 20V
6
4
2
0
0
30 60 90
Q g ‐ Gate Charge( nC )
120
6000
4500
3000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
1500
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
1000
M a xim u m S a fe O p e ra tin g A re a
100
R d s( o n ) L im it
10
1 0 μ s
100 μ s
D1C0
10
0m
1m
ms
s
s
1 V G S = 1 0 V
S in g le P u lse
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0.1
1 10
V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
100
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
RSTIθC N J= C G= 2 L25E°. 5CP° UC/LWSE
0.1 1 10 100
Single Pulse Time ( mSEC )
1000
1
Transient Therm al Response Curve
D uty Cycle = 0.5
0.2
0.1 0.1
0.05
N o tes:
0.02
0.01
S in g le P u ls e
0.01
1 0‐2
1 0‐1
DM
1 10
t 1 ,T im e ( m S E C )
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3 .TJ ‐ T C = P * R θ J C (t )
4 .R θ J C (t )= r ( t ) * Rθ JC
100
1000
2015/1/12
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD04N04H.PDF ] |
Número de pieza | Descripción | Fabricantes |
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