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Teilenummer | EMD09N08E |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 6 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
9mΩ
ID
103A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.3mH, ID=45A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2014/12/11
EMD09N08E
LIMITS
±25
103
80
200
45
303
101
223
89
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
0.56
60
UNIT
°C / W
p.1
Outline Drawing
Dimension in mm
EMD09N08E
Dimension A b b1 c c2 E L1 L2 L3 L4 ø e f g h
Min.
4.20 0.70 0.90 0.30 1.10 9.80 2.55 6.10 14.80 13.50 3.40 2.35 1.30 3.40 2.40
Max.
4.80 1.10 1.50 0.70 1.50 10.50 2.85 6.50 15.40 14.50 3.80 2.75 1.90 3.80 3.00
2014/12/11
p.6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ EMD09N08E Schematic.PDF ] |
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