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PDF EMC09N08E Data sheet ( Hoja de datos )
| Número de pieza | EMC09N08E | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
75V
D
RDSON (MAX.)
9mΩ
ID
103A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.3mH, ID=60A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2015/5/25
EMC09N08E
LIMITS
±30
103
80
200
68
540
180
223
89
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
0.56
60
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 30A
8
VD S = 20V 40V
6
4
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
EMC09N08E
4000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
Ciss
2000
1000
Coss
Crss
0
0 20 40 60
VD S ‐ Drain‐Source Voltage( V )
80
103
Maximum Safe Operating Area
RDS(ON) Limited
102
101
10μs
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=0.56°C/W
Vgs=10V
Single Pulse
10‐1
100 101
102
VDS, Drain‐Source Voltage( V )
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθ C J= C = 2 05°. 5C6° C/W
0.1 1 10 100
Single Pulse Time( sec )
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=0.56°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100
t1,Time( sec )
101
2015/5/25
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMC09N08E.PDF ] | |
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