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Teilenummer | EMF14N02A |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 6 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
13.5mΩ
ID 48A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
375°C / W when mounted on a 1 in2 pad of 2 oz copper.
2014/11/25
EMF14N02A
LIMITS
±12
48
20
140
33
54
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
Outline Drawing
E
E2
B2
P
B1
B
A
C
L3
A1
EMF14N02A
Dimension A A1 B B1 B2 C
D D2 D3 E E2 H
L L1 L2 L3 P
Min.
2.10 0.95 0.30 0.40 0.60 0.40 5.30 6.70 2.20 6.40 4.80 9.20 0.89 0.90 0.50 0.00 2.10
Max.
2.50 1.30 0.85 0.94 1.00 0.60 6.20 7.30 3.00 6.70 5.45 10.15 1.70 1.65 1.10 0.30 2.50
Footprint
7.00
2.3 2.3
1.50
2014/11/25
p.6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ EMF14N02A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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