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PDF EMD12N06A Data sheet ( Hoja de datos )
| Número de pieza | EMD12N06A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
12mΩ
ID 48A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD12N06A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=40A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
48
28
150
40
80
40
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=30A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Pulsed drain current rating is package limited.
2.5
°C / W
75
2015/7/10
p.1
1 page  
10
Gate Charge Characteristics
I D = 20A
8
VD S = 15V 30V
EMD12N06A
2000
1500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
6
4
2
0
0
1000
7 14 21
Q g ‐ Gate Charge( nC )
28
Coss
500
Crss
0
0 15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a x im u m S a fe O p e ra tin g A re a
100
R d s( o n ) L im it
10
1 0 μ s
1m s 100 μs
D
1
C
10m
00ms
s
1 V G S = 1 0 V
SIN G LE P U LSE
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D r a in ‐ S o u r c e V o lt a g e ( V )
100
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10 100
Single Pulse Time(SEC)
1000
1
T ra n sie n t T h e rm a l R e spo n se C urve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
0.01
Single Pulse
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e (sec)
1.Duty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3.TJ ‐ T C = P * R θ J C (t)
4 .Rθ J C (t)=r(t) * RθJC
100
1000
2015/7/10
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD12N06A.PDF ] | |
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