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PDF EMB06N06CS Data sheet ( Hoja de datos )
| Número de pieza | EMB06N06CS | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
5.7mΩ
ID 70A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N06CS
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=75A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
70
44
170
75
281
140
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Pulsed drain current rating is package limited.
2.5
62.5
°C / W
2016/8/2
p.1
1 page  
EMB06N06CS
10
Gate Charge Characteristics
I D = 30A
8
VD S = 15V
30V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
1500
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a xim u m S a fe O p e ra tin g A re a
100
R
d
s
( o n
)
L
i
m
i
t
10
1 0μ s
1m s 100 μ s
D
10
C
10m
0ms
s
1 V G S = 1 0 V
S IN G LE P U LSE
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0.1 1
10
V D S , D r a i n ‐ S o u r c e V o lt a g e ( V )
100
1
D u ty C y cle = 0 .5
0.5
Transient Therm al Response Curve
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRTθIC N J= C G= 2 L25E°. 5CP° UC/LWSE
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y c le ,D =
t1
t2
2 .Rθ J C = 2.5°C/W
3 .TJ ‐ TC = P * Rθ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2016/8/2
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB06N06CS.PDF ] | |
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