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PDF RB068L150 Data sheet ( Hoja de datos )
| Número de pieza | RB068L150 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diode
RB068L150
Application
General rectification
Dimensions (Unit : mm)
2.6±0.2
Datasheet
Land size figure (Unit : mm)
2.0
Features
1) Small power mold type.(PMDS)
2) Ultra low IR
3) High reliability
99
12
1.5±0.2
0.1±0.02
0.1
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC :SOD-106
1 2 Manufacture Date
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.15.55±00..055
cathode
anode
0.3
2.9±0.1
4.0±0.1
φ11..5555
2.8MAX
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz・1cyc) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounting on epoxi board. 180°Half sine wave
Limits
150
150
2
90
150
55 to 150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min.
-
-
Typ. Max.
0.74 0.81
0.1 3.0
Unit
V
A
Conditions
IF=2.0A
VR=150V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C
1 page  
RB068L150
Electrical characteristic curves
Data Sheet
0.02
0.015
DUTY = 100%(DC)
0.01
DUTY = 50%
0.005 Sin(θ=180)
0
0 30 60 90 120 150
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4
VR=75V
Tj=150°C
3
DUTY = 50%
DUTY = 100%(DC)
2
Sin(θ=180)
1
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
4
DUTY = 100%(DC)
3
DUTY = 50%
2
Sin(θ=180)
1
VR=75V
Tj=150°C
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
5
4
3
2 AVE : 1.34kV
AVE : 0.78kV
1
0 C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2016.11 - Rev.C
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RB068L150.PDF ] | |
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