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Teilenummer | RB095B-40 |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 4 Seiten Schottky barrier diode
RB095B-40
Applications
General rectification
(Common cathode dual chip)
Dimensions(Unit : mm)
Features
1)Power mold type.(CPD3)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Data Sheet
Land size figure(Unit : mm)
6.0
1.6 1.6
CPD 2.3 2.3
Structure
(2)
Taping dimensions(Unit : mm)
(1) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
VRM
VR
Io
45
40
6
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature
IFSM
Tj
45
150
Storage temperature
Tstg 40 to 150
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120C
Unit
V
V
A
A
C
C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.55
IR - - 100
jc - - 6.0
Unit
V
A
C/W
Conditions
IF=3.0A
VR=40V
junction to case
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.F
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB095B-40 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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