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RB095B-30 Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RB095B-30
Beschreibung Schottky Barrier Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 4 Seiten
RB095B-30 Datasheet, Funktion
Schottky barrier Diode
RB095B-30
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Power mold type.(CPD)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Data Sheet
Land size figure(Unit : mm)
6.0
1 6 1.6
CPD 2.3 2.
Structure
(2)
Taping dimensions(Unit : mm)
(1) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
VRM
VR
Io
35
30
6
Forward current surge peak (60Hz1cyc)(*1)
Junction temperature
IFSM
Tj
35
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125C
Unit
V
V
A
A
C
C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
VF
IR
jc
Min.
-
-
-
Typ. Max.
- 0.425
- 200
- 6.0
Unit
V
μA
C/W
Conditions
IF=3.0A
VR=30V
junction to case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.F





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